a,nov,2010 jiangsu changjiang electronics technology co., ltd to-220-3l plastic-encapsulate diodes MBR10200CT schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 200 v v r(rms) rms reverse voltage 140 v i o average rectified output current 10 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 120 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage v (br) i r =100 a 200 v reverse current i r v r =200v 5 a v f(1) i f =5a 0.84 v forward voltage v f(2) * i f =10a 0.95 v typical total capacitance c tot v r =4v,f=1mhz 300 pf *pulse test to-220-3l 1. anode 2. cathode 3. a node
0 100 200 300 400 500 600 700 800 900 1000 1 10 100 1000 10000 25 50 75 100 125 150 175 200 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 0 50 100 150 200 1 forward characteristics forward voltage v f (mv) forward current i f (ma) t a = 2 5 t a = 1 0 0 reverse characteristics t a = 2 5 t a = 1 0 0 reverse current i r (ua) reverse voltage v r (v) MBR10200CT power derating curve power dissipation p d (w) ambient temperature t a ( ) t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,mar,2014
|
